Journal: Beilstein Journal of Nanotechnology

Article Title: Charge carrier mobility and electronic properties of Al(Op) 3 : impact of excimer formation

doi: 10.3762/bjnano.6.112

Figure Lengend Snippet: Tris(1-oxo-1 H -phenalen-9-olate)aluminum(III) (Al(Op) 3 ) structure. H atoms are omitted for clarity.

Article Snippet: Finally, a 40 nm Al(Op) 3 layer was deposited on the OTS-modified substrate in a ultra-high vacuum evaporator (a dual chamber, Theva system).

Techniques:

Journal: Beilstein Journal of Nanotechnology

Article Title: Charge carrier mobility and electronic properties of Al(Op) 3 : impact of excimer formation

doi: 10.3762/bjnano.6.112

Figure Lengend Snippet: Cyclic voltammogram for Al(Op) 3 recorded at room temperature in CH 2 Cl 2 solution using TBAPF 6 as the electrolyte and ferrocene as an internal standard. Scan rate: 0.1 Vs −1 . The graphical estimation of the first reduction wave onset is highlighted in green. The LUMO energy level, −3.26 eV, was computed by using the onset of the first reduction wave at −1.54 V [ – ].

Article Snippet: Finally, a 40 nm Al(Op) 3 layer was deposited on the OTS-modified substrate in a ultra-high vacuum evaporator (a dual chamber, Theva system).

Techniques:

Journal: Beilstein Journal of Nanotechnology

Article Title: Charge carrier mobility and electronic properties of Al(Op) 3 : impact of excimer formation

doi: 10.3762/bjnano.6.112

Figure Lengend Snippet: Absorption (dotted line) and emission spectra (solid line) of Al(Op) 3 in CH 2 Cl 2 solution (black) and as a thin film on quartz (red). In the absorption spectra, the first band, between 325 and 375 nm (ε 362 = 90.7 × 10 3 M −1 cm −1 ), is associated with π→π* transitions. The second structured band, between 400 and 475 nm (ε 454 = 43.6 × 10 3 M −1 cm −1 ), is attributed to n→π* transitions. In the inset the region of the first absorption band and the graphical estimation of the onset of the bands are illustrated. The onset of Al(Op) 3 in solution is 464 nm (1) and in the thin film is 476 nm (2). The respective optical HOMO–LUMO band gaps converted to eV are 2.67 eV and 2.60 eV. The emission spectra were recorded with an excitation wavelength of 350 nm. The excimer formation is clearly noticeable from the difference in the emission peaks in solution and in the thin film. Photographs of the samples under UV irradiation are included to show the visible color change.

Article Snippet: Finally, a 40 nm Al(Op) 3 layer was deposited on the OTS-modified substrate in a ultra-high vacuum evaporator (a dual chamber, Theva system).

Techniques: Irradiation

Journal: Beilstein Journal of Nanotechnology

Article Title: Charge carrier mobility and electronic properties of Al(Op) 3 : impact of excimer formation

doi: 10.3762/bjnano.6.112

Figure Lengend Snippet: Transfer curve of the Al(Op) 3 -based TFT with a channel length of 100 μm. In this figure, I DS and V DS are the source–drain current and voltage and V G refers to the gate voltage. The hole mobility, extrapolated by the transfer characteristics, ranges between 0.6 × 10 −6 and 2.1 × 10 −6 cm 2 ·V −1 ·s −1 .

Article Snippet: Finally, a 40 nm Al(Op) 3 layer was deposited on the OTS-modified substrate in a ultra-high vacuum evaporator (a dual chamber, Theva system).

Techniques:

Journal: Beilstein Journal of Nanotechnology

Article Title: Charge carrier mobility and electronic properties of Al(Op) 3 : impact of excimer formation

doi: 10.3762/bjnano.6.112

Figure Lengend Snippet: Comparison of the source–drain current ( I DS ) and the leakage gate current ( I G ) from the transfer characterization of the Al(Op) 3 -based TFT with a channel length of 100 μm. The source–drain bias, V DS , for this measurement is −70 V. I SD currents are far higher than I G in the high voltage regime, indicating that the mobility calculated from the transfer curves is reliable and not impacted by the leakage current.

Article Snippet: Finally, a 40 nm Al(Op) 3 layer was deposited on the OTS-modified substrate in a ultra-high vacuum evaporator (a dual chamber, Theva system).

Techniques:

Journal: Beilstein Journal of Nanotechnology

Article Title: Charge carrier mobility and electronic properties of Al(Op) 3 : impact of excimer formation

doi: 10.3762/bjnano.6.112

Figure Lengend Snippet: a) HOMO (left) and LUMO (right) orbitals of Al(Op) 3 calculated with TURBOMOLE on a B3-LYP /SV(P) level of theory in vacuum. b) The same orbitals calculated in the explicit matrix, represented by a self-consistently evaluated cloud of point charges. The electrostatic interaction with the environment leads to the localization of the frontier orbitals.

Article Snippet: Finally, a 40 nm Al(Op) 3 layer was deposited on the OTS-modified substrate in a ultra-high vacuum evaporator (a dual chamber, Theva system).

Techniques:

Journal: Beilstein Journal of Nanotechnology

Article Title: Charge carrier mobility and electronic properties of Al(Op) 3 : impact of excimer formation

doi: 10.3762/bjnano.6.112

Figure Lengend Snippet: Energy levels of Al(Op) 3 calculated with different conditions, namely, HOMO and LUMO in vacuum (vac.) and in a self-consistent electrostatic environment (env.), with electron affinity (EA) and ionization potential (IP) in vacuum and environment and SOMO + and − orbitals in vacuum.

Article Snippet: Finally, a 40 nm Al(Op) 3 layer was deposited on the OTS-modified substrate in a ultra-high vacuum evaporator (a dual chamber, Theva system).

Techniques: